Inverted optical device

ABSTRACT

Inverted optical device. In accordance with an embodiment of the present invention, a plurality of piggyback substrates are attached to a carrier wafer. The plurality of piggyback substrates are dissimilar in composition to the carrier wafer. The plurality of piggyback substrates are processed, while attached to the carrier wafer, to produce a plurality of integrated circuit devices. A flip wafer is attached to the plurality of light emitting diodes, away from the carrier wafer and the carrier wafer is removed. The plurality of light emitting diodes may be singulated to form individual light emitting diode devices.

FIELD OF INVENTION

Embodiments of the present invention relate to the field of integratedcircuit design and manufacture. More specifically, embodiments of thepresent invention relate to systems and methods for inverted opticaldevices.

BACKGROUND

Silicon is the most common substrate material utilized for integratedcircuit fabrication. Accordingly, much of the fabrication processmachinery is targeted for use with Silicon. The current state of the artfabrication facilities utilize 200 mm (“8 inch”) to 300 mm (“12 inch”)diameter Silicon wafers. In general, a fabrication facility and afabrication process are more efficient, e.g., produce more integratedcircuits in less time and/or at a lower cost, using a larger wafer size.

A variety of integrated circuit devices benefit from, or require,non-Silicon substrates, for example, light emitting diodes or lasers,optical waveguides, radio-frequency circuits, low power circuitry orradiation hardened circuitry. Wafers grown using materials other thansilicon are generally only available in smaller wafer sizes, for avariety of reasons including crystal growth characteristics, mechanicalstrength and the like. For example, such non-Silicon wafers aregenerally not available in sizes over 100 mm.

SUMMARY OF THE INVENTION

Therefore, what is needed are systems and methods for inverted opticaldevices. What is additionally needed are systems and methods forinverted optical devices that enable dissimilar substrates to benefitfrom process machinery optimized for large substrates. A further needexists for systems and methods for inverted optical devices that arecompatible and complementary with existing systems and methods ofintegrated circuit design, manufacturing and test. Embodiments of thepresent invention provide these advantages.

In a first method embodiment in accordance with the present invention, aplurality of piggyback substrates are attached to a carrier wafer. Theplurality of piggyback substrates are dissimilar in composition to thecarrier wafer. The plurality of piggyback substrates are processed,while attached to the carrier wafer, to produce a plurality ofintegrated circuit devices. A flip wafer is attached to the plurality oflight emitting diodes, away from the carrier wafer and the carrier waferis removed. The plurality of light emitting diodes may be singulated toform individual light emitting diode devices.

In accordance with another embodiment of the present invention, a methodincludes bonding a piggyback substrate to a carrier wafer andfabricating a light emitting diode on the piggyback substrate whilebonded to the carrier wafer. The method also includes attaching a flipwafer to the top of the light emitting diode, away from the carrierwafer and separating the piggyback substrate from the light emittingdiode. The carrier wafer may also be removed.

In accordance with yet another embodiment of the present invention, anapparatus includes a non-conducting substrate structure. The apparatusalso includes a light emitting diode semiconductor structure having apair of contact surfaces, wherein the pair of contact surfaces face thesubstrate structure. The apparatus further includes an insulating,inorganic material coupling the light emitting diode semiconductorstructure to the substrate structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and form a part ofthis specification, illustrate embodiments of the invention and,together with the description, serve to explain the principles of theinvention. Unless otherwise noted, the drawings are not drawn to scale.

FIG. 1A illustrates a plan view of an exemplary integrated circuitmanufacturing arrangement, in accordance with embodiments of the presentinvention.

FIG. 1B illustrates a plan view of an exemplary integrated circuitmanufacturing arrangement, in accordance with embodiments of the presentinvention.

FIG. 2 illustrates a cross sectional view of an exemplary integratedcircuit manufacturing arrangement, in accordance with embodiments of thepresent invention.

FIG. 3 illustrates a cross sectional view of an exemplary light emittingdiode device, in accordance with embodiments of the present invention.

FIG. 4A illustrates a process of piggyback wafer assembly, in accordancewith embodiments of the present invention.

FIG. 4B illustrates a process of piggyback wafer assembly, in accordancewith embodiments of the present invention.

FIGS. 5A, 5B, 5C, 5D, 5E and 5F illustrate a method of manufacturing alight emitting diode assembly, in accordance with embodiments of thepresent invention.

FIG. 6 illustrates an example of an application of a light emittingdiode, in accordance with embodiments of the present invention.

FIG. 7 illustrates an exemplary portable computer system, in accordancewith embodiments of the present invention.

DETAILED DESCRIPTION

Reference will now be made in detail to various embodiments of theinvention, front facing piggyback wafer assembly, examples of which areillustrated in the accompanying drawings. While the invention will bedescribed in conjunction with these embodiments, it is understood thatthey are not intended to limit the invention to these embodiments. Onthe contrary, the invention is intended to cover alternatives,modifications and equivalents, which may be included within the spiritand scope of the invention as defined by the appended claims.Furthermore, in the following detailed description of the invention,numerous specific details are set forth in order to provide a thoroughunderstanding of the invention. However, it will be recognized by one ofordinary skill in the art that the invention may be practiced withoutthese specific details. In other instances, well known methods,procedures, components, and circuits have not been described in detailas not to unnecessarily obscure aspects of the invention.

Notation and Nomenclature

Some portions of the detailed descriptions which follow (e.g., processes400, 470 and 500) are presented in terms of procedures, steps, logicblocks, processing, and other symbolic representations of operations ondata bits that may be performed on computer memory. These descriptionsand representations are the means used by those skilled in the dataprocessing arts to most effectively convey the substance of their workto others skilled in the art. A procedure, computer executed step, logicblock, process, etc., is here, and generally, conceived to be aself-consistent sequence of steps or instructions leading to a desiredresult. The steps are those requiring physical manipulations of physicalquantities. Usually, though not necessarily, these quantities take theform of electrical or magnetic signals capable of being stored,transferred, combined, compared, and otherwise manipulated in a computersystem. It has proven convenient at times, principally for reasons ofcommon usage, to refer to these signals as bits, values, elements,symbols, characters, terms, numbers, or the like.

It should be borne in mind, however, that all of these and similar termsare to be associated with the appropriate physical quantities and aremerely convenient labels applied to these quantities. Unlessspecifically stated otherwise as apparent from the followingdiscussions, it is appreciated that throughout the present invention,discussions utilizing terms such as “attaching” or “processing” or“singulating” or “processing” or “forming” or “roughening” or “filling”or “accessing” or “performing” or “generating” or “adjusting” or“creating” or “executing” or “continuing” or “indexing” or “computing”or “translating” or “calculating” or “determining” or “measuring” or“gathering” or “running” or the like, refer to the action and processesof a computer system, or similar electronic computing device, e.g., acomputer controlled integrated circuit manufacturing system, thatmanipulates and transforms data represented as physical (electronic)quantities within the computer system's registers and memories intoother data similarly represented as physical quantities within thecomputer system memories or registers or other such information storage,transmission or display devices.

As used herein, the term “carrier wafer” is not intended to limit thefunction of such a wafer. For example, a “carrier wafer” may include avariety of circuits and/or structures, and a “carrier wafer” is notlimited to only carrying other structures.

Inverted Optical Device

FIG. 1A illustrates a plan view of an exemplary integrated circuitmanufacturing arrangement 100, in accordance with embodiments of thepresent invention. Arrangement 100 comprises a first, “large,” carrierwafer 110 and a plurality of smaller, “piggyback” wafers, 120, 130, 140and 150. Wafer flats or notches, if any, are not illustrated. In theexemplary embodiment of FIG. 1A, wafer 110 is nominally 300 mm, alsoknown as an “12 inch” wafer. Piggyback wafers 120-150 are 76.2 mm(“3-inch”) wafers. These sizes are exemplary, and not intended to belimiting. It is to be appreciated that embodiments in accordance withthe present invention are well suited to a variety of wafer sizes,shapes and materials for both carrier and piggyback wafers.

Piggyback wafers 120-150 generally comprise a non-Silicon substrate.Common non-Silicon substrates include sapphire (α-Al₂O₃), GalliumNitride (GaN), Gallium Arsenide (GaAs), Gallium Phosphide (GaP), LithiumTantalate (LiTa), Lithium Niobate (LiN), Indium Arsenide (InAs), IndiumPhosphide (InP), Silicon Carbide (SiC), and Germanium (Ge). In general,the size of piggyback wafers 120-150 is limited to be less than the sizeof carrier wafer 110. For example, crystal growth characteristics and/ormechanical properties of a non-Silicon substrate may limit the size ofpiggyback wafers 120-150 to less than the size of a larger, “modern”Silicon substrate.

It is to be appreciated that piggyback wafers 120-150 may also compriseSilicon, in whole or in part. Other factors may make use of piggybackwafers 120-150 comprising Silicon substrates desirable. For example, acritical process step may be performed on piggyback wafers 120-150 on afabrication line that is limited to relatively smaller wafers.

Carrier wafer 110 may comprise Silicon, or any other material suitablefor the processing environment of piggyback wafers 120-150, including,for example, glass, quartz, fused silica, metals and the like.Characteristics of concern include process temperature, compatibilitywith process ambient gasses, mechanical strength, flatness, resistanceto vibration, suitability to bonding with the piggyback wafers, and thelike. Carrier wafer 110 should be sufficiently large to attach at leasttwo piggyback wafers, e.g., piggyback wafers 120, 130.

Piggyback wafers 120-150 are attached or bonded to carrier wafer 110 viaany suitable attachment method, for example, direct bonding, oxide tooxide bonding, anodic bonding, brazing, diffusion bonding, eutecticbonding, plasma activated bonding, glass frit bonding, adhesive bonding,reactive bonding and the like. Piggyback wafers 120-150 may comprisesubstantially unprocessed, e.g., blank, substrates, or may have had someprocessing prior to attachment to carrier wafer 110.

After attachment, a series of integrated circuit processing operationsmay be performed on piggyback wafers 120-150, while attached to carrierwafer 110, as part of integrated circuit manufacturing arrangement 100.For example, such processing may be described as forming asemiconducting structure on the piggyback wafers 120-150. Alternatively,such processing may be described as forming an active layer on thepiggyback wafers 120-150. An active layer may include devices such astransistors, diodes, capacitors, resistors, inductors, filters, e.g.,comb filters, and the like. In this novel manner, carrier wafer 110enables piggyback wafers 120-150 to be processed on fabricationequipment intended for wafers larger than the individual piggybackwafers 120-150.

FIG. 1B illustrates a plan view of an exemplary integrated circuitmanufacturing arrangement 160, in accordance with embodiments of thepresent invention. Arrangement 160 comprises a first, “large,” carrierwafer 110 and a plurality of “piggybacked,” singulated dice 170-190.Wafer flats or notches, if any, are not illustrated. FIG. 1B illustratestwo possible shapes (plan view) for wafer 110, e.g., generally circularand generally square, 110A, illustrated with dotted lines. A variety ofshapes for a carrier wafer are well-suited to embodiments in accordancewith the present invention. Piggyback dice 170-190 may comprise aSilicon or non-Silicon substrate.

It may be desirable to singulate dice 170, 180 and 190 prior to acompletion of fabrication activities. For example, mechanical strengthor crystal orientation characteristics may make singulation of dice170-190 impractical after completion of all fabrication processing.

In addition, singulation of dice 170-190 prior to attachment to carrierwafer 110, as illustrated in exemplary integrated circuit manufacturingarrangement 160, may enable a greater area of carrier wafer 110 to carrydevices, in comparison to exemplary integrated circuit manufacturingarrangement 100 (FIG. 1A).

Piggyback dice 170-190 are attached or bonded to carrier wafer 110 viaany suitable attachment method, for example, direct bonding, oxide tooxide bonding, anodic bonding, brazing, diffusion bonding, eutecticbonding, plasma activated bonding, glass frit bonding, adhesive bonding,reactive bonding and the like. Piggyback dice 170-190 may comprisesubstantially unprocessed substrates, or may have undergone someprocessing prior to attachment to carrier wafer 110.

It is to be appreciated that plurality of dice 170-190 need not be ofthe same size, shape or design, and need not have the same type ofsubstrate, in accordance with embodiments of the present invention. Forexample, an instance of die 170 may be a blue light emitting diodecomprising a sapphire substrate. An instance of die 180 may be a greenlight emitting diode comprising a Gallium phosphide (GaP) substrate. Aninstance of die 190 may be a red light emitting diode comprising aGallium arsenide (GaAs) substrate. The three instances of dice 170-190may be arranged in an array on carrier wafer 110 such that the lightfrom such three primary colors may be combined to produce a variety ofspectral colors.

After attachment, a series of integrated circuit processing operationsmay be performed on piggyback dice 170-190, while attached to carrierwafer 110, as part of integrated circuit manufacturing arrangement 160.For example, such operations may be described as forming asemiconducting structure on the piggyback dice 170-190. Alternatively,such processing may be described as forming an active layer on thepiggyback dice 170-190. An active layer may include devices such astransistors, diodes, capacitors, resistors, inductors, filters, e.g.,comb filters, and the like. In this novel manner, carrier wafer 110enables piggyback dice 170-190 to be processed on fabrication equipmentintended for wafers, after singulation of dice 170-190.

Further with respect to FIGS. 1A and 1B, it is to be appreciated thatwafer 110 may comprise mechanical and/or electrical features, appliedprior to and/or after attachment of piggyback wafers 120-150 (FIG. 1A)or dice 170 (FIG. 1B). For example, wafer 110 may comprise passiveelectrical features, e.g., “wires,” to couple instances of dice 170-190.Wafer 110 may also comprise active electrical features, e.g., logicgates, power supply features, drive electronics and/or complexintegrated circuits, e.g., a microprocessor, to couple to dice 170-190.

It is to be appreciated that embodiments in accordance with the presentinvention are well suited to a variety of plan-view shapes for carrierwafer 110. For example, carrier wafer 110 may be generally circular,with or without a flat or a notch. In addition, carrier wafer 110 may berectangular or any other suitable shape, e.g., a hexagon. A wide varietyof factors should be considered in selecting a shape for carrier wafer110, including, for example, medium growth characteristics, processingequipment features and/or requirements, and desired placement ofpiggyback wafers, e.g., 120-150 (FIG. 1A), and/or desired placement ofsingulated dice, e.g., 170-190 (FIG. 1B). For example, it may beadvantageous to place rectangular singulated dice on a rectangularcarrier wafer.

FIG. 2 illustrates a cross sectional view of an exemplary integratedcircuit manufacturing arrangement 200, in accordance with embodiments ofthe present invention. Arrangement 200 generally corresponds to asection of arrangement 100 through a piggyback wafer 120 (FIG. 1A), or asection of arrangement 160 through a piggyback die 170 (FIG. 1B). Thematerial types and numbers of layers set forth are exemplary, and notintended to be limiting.

In accordance with an embodiment of the present invention, integratedcircuit manufacturing arrangement 200 comprises a carrier wafer 210comprising, for example, Silicon. It is to be appreciated thatembodiments in accordance with the present invention are well suited toa carrier wafers comprising a variety of materials, including, forexample, glass, quartz, fused silica, metals and the like. A piggybacksubstrate 240 comprising, for example, sapphire, is bonded to carrierwafer 210 via oxide to oxide bonding, producing bonding layers 220, 230.

After piggyback substrate 240, for example, as a wafer (FIG. 1A) or as asingulated die (FIG. 1B), is attached to carrier wafer 210, well-knownintegrated circuit fabrication operations are performed on piggybacksubstrate 240 while attached to carrier wafer 210. It is to beappreciated that well-known integrated circuit fabrication operationsmay also be performed on carrier wafer 210.

In an exemplary embodiment, a GaN buffer layer 241, which may beundoped, is formed on sapphire substrate 240. Layer 241, or any layerformed on a substrate may be referred to as a first sequentiallyfabricated layer of the light emitting diode. An n-type GaN contactlayer 242 is formed on buffer layer 241. An optional n-type AlGaNcladding layer 243 may be formed on contact layer 242. A p-type InGaNactive layer 244 is formed on cladding layer 243. The active layer 244may also be a multiple quantum well (MQW) structure which is responsiblefor light emission, for example, a MQW comprising InGaN/GaN units thatemit blue light. A p-type AlGaN cladding layer of electron blockinglayer (EBL) 245 is formed on active layer 244, and a p-type GaN contactlayer 246 is formed on cladding layer 245. Layer 246 may be referred toas a last sequentially fabricated layer of the light emitting diode. Thestack may be annealed in a Nitrogen atmosphere at about 700° C., forminga blue LED. Electrodes 253 and 254 are added to contact the integratedcircuit device.

Integrated circuit manufacturing arrangement 200 may also compriseintegrated circuits or other structures 260 formed on and/or in carrierwafer 210, including, for example, passive electrical features, e.g.,“wires,” and/or active electrical features, e.g., logic gates, drivercircuits, radio frequency circuits, highly integrated circuits, e.g., amicroprocessor, and/or power supply features, and/or other structures,including, for example, microelectromechanical systems (MEMS). Theformation of other structures 260 may occur prior to and/or afterattachment of piggyback substrate 240 to carrier wafer 210. Theindicated location of other structures 260 is exemplary, and notintended to be limiting. For example, a portion or all of otherstructures 260 may be located under, e.g., within the verticalprojection of, piggyback substrate 240.

FIG. 3 illustrates a cross sectional view of an exemplary light emittingdiode device 300, in accordance with embodiments of the presentinvention. Light emitting diode device 300 comprises a light emittingdiode formed on a sapphire substrate comprising layers 240-246, aspreviously described with respect to FIG. 2.

In addition to layers 240-246, light emitting diode device 300 comprisespackage contacts 380 and 381. Package contacts 380 and 381 electricallycouple the electronics of light emitting diode device 300 to outsideelectronics, and may comprise, for example, solder balls, ControlledCollapse Chip Connection (“C4”) and/or wire bonding contacts. Packagecontacts 380, 381 may be formed on the secondary or back side of carrierwafer substrate 310, although that is not required. Similar to carrierwafer 210 (FIG. 2), carrier wafer substrate 310 may comprise Silicon orother materials including, for example, glass, quartz, fused silicaand/or metals, in accordance with embodiments of the present invention.

In accordance with embodiments of the present invention, packagecontacts 380, 381 may be formed on the front or primary surface, e.g.,on the same side as piggyback substrate 240, of carrier wafer substrate310. This arrangement is illustrated with dotted lines in FIG. 3. Sucharrangement may be compatible with package wiring processes andstructures, for example, wire bonding.

Light emitting diode device 300 further comprises bonding layers 320,330. Bonding layers 320, 330 are generally similar to bonding layers220, 230 as described in FIG. 2, and may result from and/or be requiredfor attachment or bonding of piggyback substrate 240 to carrier wafersubstrate 310.

Light emitting diode device 300 further comprises conductors 360 and 362for coupling package contacts 380 and 381 to the contact layers 246 and244 respectively, of the light emitting diode 240-246. Conductors 360and 362 may comprise vias, for example, or any other suitable conductivetechnology. Conductors 360 and 362 need not be the same material, norconstructed utilizing the same techniques throughout light emittingdiode device 300. Conductor 360 electrically couples package contact 380to contract layer 246 through electrode 353. Similarly, conductor 362electrically couples package contact 381 to contract layer 244 throughelectrode 354.

A fill material 376 encompasses layers 320, 330, 240-246, 260, 262, 353and 353. Fill material 376 is on top of carrier wafer substrate 310.Fill material 376 comprises any suitable fill material, and may form aprotective encapsulant, suitable for providing environmental andhandling protection. Fill material 376 should be a good electricalinsulator.

On top of fill material 376, a plurality of optical layers, e.g., firstoptical layer 370 and n-th optical layer 372 are fabricated. The opticallayers function to couple the light emitted from the light emittingdiode 240-246 to free space. One or more of optical layers 370-372 mayform optical lenses. In general, a plurality of optical layers shouldform a progression of refractive indices from the refractive index ofthe LED itself to that of air. For example, the optical layer materialwith the highest refractive index should be closest to the LED, and theoptical layer material with the lowest refractive index should befarthest from the LED.

In accordance with embodiments of the present invention, one or more ofoptical layers 370-372 may comprise a coating of phosphor(s) to producea phosphor-based white LED.

Table 1, below, list some potentially suitable materials for use asoptical layer materials and their corresponding refractive indices, inaccordance with embodiments of the present invention.

TABLE 1 Material Refractive Index Zirconia (ZrO₂) 2.2 Lithium niobate(LiNbO₃) 2.3 Potassium Niobate (KNbO₃) 2.28 Silicon nitride (Si₃N₄)2.0404 Cadmium indate (CdIn₂O₄) 2.58 Hafnia (HfO₂) 1.9 Strontiumtitanate (SrTiO₃) 2.472 Titanium dioxide (TiO₂) 2.44 Niobium pentoxide(Nb₂O₅) 2.35 Zinc Oxide (ZnO) 2.0 Zinc sulfide (ZnS) 2.419 Molybdenumtrioxide (MoO₃) 2.0

In this novel manner, light emitting diode device 300 comprises manyelements of a complete light emitting diode, ready for a next levelpackaging. For example, light emitting diode device 300 compriseselectrical package contacts, optical devices, e.g., lenses, encapsulantand the like. Light emitting diode device 300 may further compriseelectrical devices, e.g., power supplies and/or drive electronics thatare generally useful for operation of a light emitting diode.

Additionally, it is to be appreciated that the carrier wafer 310material, e.g., Silicon, in the final device 300 may facilitate heattransfer from the light emitting diode to higher-level packaging and/orthe ambient environment. For example, the thermal conductivity ofSilicon, 149 W·m⁻¹·K⁻¹, is much greater than that of sapphire, 32 or 35W·m⁻¹·K⁻¹, depending on the orientation.

FIG. 4A illustrates a process 400 of piggyback wafer assembly, inaccordance with embodiments of the present invention. At optional 410, acarrier wafer, e.g., wafer 110 of FIG. 1A, is processed. Such processingmay include preparation for attachment of small wafer(s), e.g., at 430,further described below. Such processing may also include well knownoperations for manufacturing, or the partial manufacture, of integratedcircuits or other structures, including, for example,microelectromechanical systems (MEMS), onto a carrier wafer. Suchprocessing may further include formation of conductive vias in a carrierwafer.

At optional 420, a plurality of small wafers, e.g., 120, 130, 140 and/or150 of FIG. 1A, are processed. It is to be appreciated that theplurality of small wafers will generally be of a different compositionthan the carrier wafer, although this is not required. For example, theplurality of small wafers may comprise a sapphire substrate, while thecarrier wafer may comprise Silicon. Processing operations performed onthe plurality of small wafers may include preparation for attachment toa carrier wafer, e.g., at 430. Such processing may also include wellknown operations for manufacturing, or the partial manufacture, ofintegrated circuits or other structures, including, for example,microelectromechanical systems (MEMS), onto such wafers.

At 430, the plurality of small wafers is attached to the carrier wafer.Such attachment may utilize any suitable attachment method, for example,direct bonding, oxide to oxide bonding, anodic bonding, brazing,diffusion bonding, eutectic bonding, plasma activated bonding, glassfrit bonding, adhesive bonding, reactive bonding and the like.

At 440, the combined plurality of small wafers and the carrier wafer areprocessed via well known semiconductor processing techniques. Forexample, such processing may be described as forming a semiconductingstructure on the small wafers. Alternatively, such processing may bedescribed as forming an active layer on the piggyback small wafers. Anactive layer may include devices such as transistors, diodes,capacitors, resistors, inductors, filters, e.g., comb filters, and thelike. Both the plurality of small wafers and the carrier wafer may beprocessed in this manner. For example, integrated circuits and/or otherstructures, including, for example, microelectromechanical systems(MEMS), may be created on the carrier wafer, the plurality of smallwafers or on both types of wafers.

At optional 450, the plurality of small wafers are separated from thecarrier wafer. Such separation may utilize any suitable separationmethod, including chemical and/or mechanical methods. In one exemplaryembodiment, a back grinding or lapping operation may remove the carrierwafer.

At 460, the plurality of small wafers are singulated to produceindividual die. Any suitable singulation process, e.g., scribing andbreaking, mechanical sawing, and/or laser cutting, may be utilized. Itis to be appreciated that such the may comprise a portion of a carrierwafer, and may further comprise integrated circuit devices and/orstructures formed on or in such a portion of the carrier wafer.

FIG. 4B illustrates a process 470 of piggyback wafer assembly, inaccordance with embodiments of the present invention. At optional 472, acarrier wafer, e.g., wafer 110 of FIG. 1A, is processed. Such processingmay include preparation for attachment of small wafer(s), e.g., at 480,further described below. Such processing may also include well knownoperations for manufacturing, or the partial manufacture, of integratedcircuits or other structures, including, for example,microelectromechanical systems (MEMS), onto a carrier wafer. Suchprocessing may further include formation of conductive vias in a carrierwafer.

At optional 474, a plurality of small wafers, e.g., 120, 130, 140 and/or150 of FIG. 1A, are processed. Such processing may include preparationfor attachment to a carrier wafer, e.g., at 480. Such processing mayalso include well known operations for manufacturing, or the partialmanufacture, of integrated circuits or other structures onto suchwafers.

At 476, the plurality of small wafers are singulated. For example, eachwafer is converted into a plurality of individual, “piggyback” dice. Anysuitable singulation process, e.g., scribing and breaking, mechanicalsawing, and/or laser cutting, may be utilized.

At 480, the piggyback dice, from the plurality of small wafers, areattached to the carrier wafer. Such attachment may utilize any suitableattachment method, for example, direct bonding, oxide to oxide bonding,anodic bonding, brazing, diffusion bonding, eutectic bonding, plasmaactivated bonding, glass frit bonding, adhesive bonding, reactivebonding and the like.

At 485, the combined plurality of piggyback dice on the carrier waferare processed via well known semiconductor processing techniques. Forexample, such processing may be described as forming a semiconductingstructure on the piggyback dice. Alternatively, such processing may bedescribed as forming an active layer on the piggyback dice. An activelayer may include devices such as transistors, diodes, capacitors,resistors, inductors, filters, e.g., comb filters, and the like. Boththe plurality of piggyback dice and the carrier wafer may be processedin this manner. For example, integrated circuits and/or otherstructures, including, for example, microelectromechanical systems(MEMS), may be created on the carrier wafer, the plurality of piggybackdice or on both types of wafers.

It is to be appreciated that the processing at 485 may include formationof structures as illustrated in FIG. 3, for example, conductors 360,362, fill 376, package contacts 380, 381, and/or optical layers 370,372.

At 490, a plurality of integrated circuit devices are singulated. It isto be appreciated that a variety of singulation methods are suitable forembodiments in accordance with the present invention. For example, thepiggyback dice may be separated from the carrier wafer. Such separationmay utilize any suitable separation method, including chemical and/ormechanical methods. In one exemplary embodiment, a back grinding orlapping operation may remove the carrier wafer. It is to be appreciatedthat such separation from the carrier wafer may result in singulation ofthe piggyback dice.

In accordance with embodiments of the present invention, well-knownsingulation techniques may be applied to the combined carrier wafer andpiggyback dice. Any suitable singulation process, e.g., scribing andbreaking, mechanical sawing, and/or laser cutting, may be utilized. Itis to be appreciated that a resulting die may comprise a portion of acarrier wafer. For example, the resulting die may comprise substratematerial from the carrier wafer, which may be different from thesubstrate of the piggyback die. The resulting die may further compriseintegrated circuit devices and/or structures formed on or in such aportion of the carrier wafer, for example, as illustrated by otherstructures 260 of FIG. 2. It is to be further appreciated that thesingulated structure may have a larger footprint than the footprint ofthe piggyback die.

FIGS. 5A-5F illustrate a method 500 of manufacturing a light emittingdiode assembly, in accordance with embodiments of the present invention.In FIG. 5A, light emitting diode layers 550 are formed on a sapphirepiggyback substrate 540, after bonding to a carrier wafer substrate 510,comprising, e.g., Silicon, quartz or fused silica. It is appreciatedthat carrier wafer substrate 510 comprises a crystalline interface withlight emitting diode layers 550. It is further appreciated thatpiggyback substrate 540 may comprise a variety of materials, e.g.,sapphire (α-Al₂O₃), Gallium Nitride (GaN), Gallium Arsenide (GaAs),Gallium Phosphide (GaP), Lithium Tantalate (LiTa), Lithium Niobate(LiN), Indium Arsenide (InAs), Indium Phosphide (InP), Silicon Carbide(SiC), or Germanium (Ge), in accordance with embodiments of the presentinvention. Bonding layers 520, 530 may be produced as a result of, or toenable, a bonding process. Exemplary materials and manufacturing methodshave been previously described. In general, there will be multipleinstances of the stack 520, 530, 540 and 550 produced on carrier wafer510.

FIG. 5A also illustrates the application of an optional sacrificiallayer 515, e.g., comprising Aluminum nitride (AlN). Optional sacrificiallayer 515 may benefit a separation process, e.g., laser lift off, asdescribed later in FIG. 5E.

In FIG. 5B, a fill material 560, comprising any suitable fill material,e.g., Silicon dioxide (SiO₂) or Silicon nitride (Si₃N₄), is formedaround and over the LED stack 520, 520, 540 and 550 and over optionalsacrificial layer 515, if present. FIG. 5B also illustrates the additionof a “flip” wafer substrate 570, comprising, for example, Silicon,glass, fused silica, plastic-based materials, glass-reinforced epoxy,metal-core printed circuit board (PCB) materials, ceramics and/ororganic materials, e.g., as utilized in multi-chip modules, applied tothe “top” of the LED stack, e.g., the side away from carrier wafer 510.It is appreciated that the LED stack, layers 550, is not grown orotherwise formed on flip wafer substrate 570. Accordingly, flip wafersubstrate 570 does not have a crystalline interface with LED layers 550.

Flip wafer substrate 570 can attached to 560 and/or 550 through bondingtechniques including, for example, direct bonding, oxide to oxidebonding, diffusion bonding, plasma activated bonding, glass fit bonding,adhesive bonding, reactive bonding and the like. Flip wafer substrate570 may have a reflective or partially reflective bottom surface, e.g.,the surface facing light emitting diode layers 550. Flip wafer substrate570 may or may not be flush with the top of light emitting diode layers550. For example, fill material 560 may or may not separate lightemitting diode layers 550 from flip wafer substrate 570.

FIG. 5C illustrates formation of conductive vias through flip wafersubstrate 570 to form contacts 572, in accordance with embodiments ofthe present invention. The vias may be formed in flip wafer substrate570 prior to or after attachment, in accordance with embodiments of thepresent invention.

FIG. 5C also illustrates an optional partial removal of fill 560 from aregion above carrier wafer 510. Any suitable process may be used topartially remove portions of fill 560. Alternatively, a lesser amount offill 560, corresponding approximately to FIG. 5C, may be applied.

In FIG. 5D, carrier wafer 510 and any bonding layers, e.g., bondinglayers 520, 530, are removed. The bottom of piggyback wafer substrate540 may be polished, e.g., to improve optical and/or thermalcharacteristics.

In accordance with an embodiment of the present invention, FIG. 5Eillustrates removal of piggyback wafer substrate 540, exposing aconductive layer 580 of the light emitting diode layers 550, e.g.,corresponding to layer 244 of FIG. 3. The piggyback substrate 540 may beremoved via a laser lift-off (LLO) process, for example using a Kryptonfluoride (KrF) and/or Argon fluoride (ArF) laser to decompose GaN or athin sacrificial Aluminum nitride (AlN) layer 515. It is to beappreciated that a laser lift off process may remove an undoped,low-temperature buffer layer, e.g., buffer layer 241 of FIG. 3, inaddition to removing a piggyback substrate, e.g., piggyback substrate540. In such a case,

A process to remove a piggyback substrate may benefit from using acarrier substrate material that is transparent to the light of suchlasers, e.g., quartz or fused silica. Such lasers generally emit in theultra-violet range of the spectrum. For example, it may be possible toremove a carrier substrate and a piggyback substrate in a singleoperation, for example, by separating the piggyback substrate from theemitting diode layers while the piggyback wafer substrate 540 and thecarrier substrate material 540 are still bonded together.

In accordance with embodiments of the present invention, removal of apiggyback substrate, e.g., the substrate upon which the LED was formed,may have advantages in light extraction and thermal management, incomparison with devices that leave such a substrate in place. Forexample, sapphire has a relatively low refractive index, e.g., about1.78. Accordingly, the presence of even a very thin, e.g., 100 nm,sapphire layer will tend to trap light within the LED stack. Forcomparison, materials that may commonly form an LED stack generally havea higher refractive index. For example, GaN has a refractive index of2.45, GaP, has a refractive index of 3.5 and/or GaAs, has a refractiveindex of 3.9.

In accordance with embodiments of the present invention, the exposedsurface of exposed conductive layer 580 may be roughened by a selectivewet etch, e.g., using alkaline etchants such as Potassium hydroxide(KOH) or Tetramethylammonium hydroxide ((CH₃)₄NOH, TMAH). Such a processmay disrupt internal reflections enabling more light to escape from thesemiconductor layer.

In addition, heat dissipation may be improved by the removal of asapphire substrate due to the poor thermal conductivity of sapphire, inaccordance with embodiments of the present invention.

In FIG. 5F, proceeding from the situation of either FIG. 5D or FIG. 5E,a plurality of optical layers, e.g., first optical layer 582, secondoptical layer 584 and n-th optical layer 586 are fabricated over the“bottom” of the light emitting diode 550 and/or piggyback substrate 540(if present), in a manner similar to that previously described withrespect to FIG. 3. The optical layers function to couple the lightemitted from the light emitting diode 550 to free space. One or more ofoptical layers 582-586 may form optical lenses. In general, a pluralityof optical layers should form a progression of refractive indices fromthe refractive index of the LED itself to that of air. For example, theoptical layer material with the highest refractive index should beclosest to the LED, and the optical layer material with the lowestrefractive index should be farthest from the LED.

In accordance with embodiments of the present invention, one or more ofoptical layers 582-586 may comprise a coating of phosphor(s) to producea phosphor-based white LED.

FIG. 5F also illustrates package contacts 588, formed on the “top”surface of flip wafer substrate 570. Package contacts 588 electricallycouple the electronics of light emitting diode layers 550 to outsideelectronics, e.g., via a printed circuit board, and may comprise, forexample, solder balls, Controlled Collapse Chip Connection (“C4”) and/orwire bonding contacts.

It is appreciated that the light emitting diode device of FIG. 5F is“upside down” or “flipped” with respect to the light emitting diodedevice previously described with respect to FIG. 3. For example, lightis emitted from device 300 (FIG. 3) in the direction of the build up oflayers of the light emitting diode, and away from the carrier wafer(removed or not) and away from the piggyback substrate (removed or not).

In contrast, as illustrated in FIG. 5F, light is emitted from theoverall device in the direction opposite of the build up of layers ofthe light emitting diode, and toward the piggyback substrate (removed ornot). Accordingly, such differences in construction may be advantageousbased on the emission characteristics of a particular lay up of a lightemitting diode.

FIG. 6 illustrates an example of an application of a light emittingdiode, in accordance with embodiments of the present invention. Lightsource 600 is well suited to a variety of lighting applications,including domestic, industrial and landscape lighting. Light source 600is also well suited to stage or theatrical lighting. Light source 600comprises a base 610. As illustrated, base 610 is an Edison type base.It is appreciated that embodiments in accordance with the presentinvention are well suited to other types of bases, including, forexample, GU, bayonet, bipin, wedge or other type of bases.

Light source 600 additionally comprises a body portion 620 that housespower conditioning electronics (not shown) that convert 110V AC inputelectrical power (or 220 V AC, or other selected input electrical power)to electrical power suitable for driving a plurality of light emittingdiode devices 640. Body portion 620 may also comprise, or couple to,optional heat sink features (not shown).

Light source 600 additionally comprises optional optics 630. Optics 630comprise diffusers and/or lenses for focusing and/or diffusing lightfrom the plurality of light emitting diode devices 640 into a desiredpattern.

Light source 600 comprises a plurality of light emitting diode devices(LEDs) 640. Individual LEDs of plurality of light emitting diode devices640 may correspond to assemblies previously described herein. Forexample, plurality of light emitting diode devices 640 may includeinstances of singulated dice 170, 180 and/or 190. In addition, pluralityof light emitting diode devices 640 may include instances of lightemitting diode device 300. Further, plurality of light emitting diodedevices 640 may include instances of light emitting diode devices asdescribed in FIGS. 5A-5F. It is appreciated that not all instances ofplurality of light emitting diode devices 640 need be identical.

It is to be further appreciated that plurality of light emitting diodedevices 640 may include a single substrate comprising multiple lightemitting devices. For example, a single instance of plurality of lightemitting diode devices 640 may comprise a plurality of individual,different, LED devices formed on a common substrate. For example, aspreviously described, an instance of die 170 may be a blue lightemitting diode comprising a sapphire substrate. An instance of die 180may be a green light emitting diode comprising a Gallium phosphide (GaP)substrate. An instance of die 190 may be a red light emitting diodecomprising a Gallium arsenide (GaAs) substrate. The three instances ofdice 170-190 may be arranged in an array on carrier wafer 110 such thatthe light from such three colors may be combined to produce a variety ofspectral colors. For example, an instance of plurality of light emittingdiode devices 640 may comprise dice 170-190 in combination to produce a“white” light output.

In accordance with embodiments of the present invention, plurality oflight emitting diode devices 640 may include additional electronicsassociated with the LED devices, e.g., as previously described withrespect to other structures 260 of FIG. 2. In one exemplary embodiment,such additional electronics may comprise circuits to implement a whitebalance among tri-color LEDs, e.g., 170, 180 and 190.

FIG. 7 illustrates an exemplary portable computer system 700, inaccordance with embodiments of the present invention. Portable computersystem 700 may be a mobile phone or smart phone, email device, tablet,laptop or netbook computer, personal digital assistant or the like. Abus 701 functionally couples the various functional blocks of system700. Bus 701 may comprise multiple busses, and any such bus may be asingle conductor.

Portable computer system 700 comprises a processor 710. Processor 710may be any type of processor for executing software, and may comprisemultiple distinct processors, including central processing units andgraphical processing units. Processor 710 may also be a multi-coredevice. Processor 710 generally controls the operation of portablecomputer system 700, and may operate a graphical user interface. Forexample, processor 710 accepts input, e.g., from touch sensor 750 and/oroptional RF communications 740, and may produce output, e.g., to display770 and/or RF communications 740. Processor 710 may access random accessmemory (RAM) 720 for programs and/or data, and may also access read onlymemory (ROM) for programs and/or data.

Portable computer system 700 optionally comprises a radio-frequency (RF)communications subsystem 740. RF communications system 740 is wellsuited to operate on a variety of radio communication protocols,including, for example, data and/or telephony networks, e.g., Bluetooth,WiFi, TDMA, CDMA, GSM, AMPS and the like. RF communications system 740,if present, operates to communicate voice, image and/or data to and fromportable communication system 700.

Portable computer system 700 comprises a touch sensor subsystem 750.Touch sensor 750 may operate as a resistive or capacitive device, andgenerally functions to accept input to system 700 in the form of atouch, e.g., from a finger and/or a stylus. Touch sensor 750 isgenerally strongly associated with a display device. For example, a userof system 700 may perceive touching a “screen” rather than a separatetouch sensor.

Portable computer system 700 also comprises a display device 770.Display 770 may be any suitable technology, including, for example, anSTN or TFT LCD display device Display 770 functions to output imagesand/or alpha-numeric information from system 700

Portable computer system 700 further includes a light 780 to illuminatedisplay 770. For example, most LCD devices do not directly producelight; rather such devices filter light from another source, e.g., light780. Alternatively, light 780 may provide supplemental illumination whenambient light is insufficient for viewing display 770.

In accordance with embodiments of the present invention, light 780comprises a plurality of light emitting diodes. Individual LEDs ofplurality of light emitting diode devices 780 may correspond toassemblies previously described herein. For example, plurality of lightemitting diode devices 780 may include instances of singulated dice 170,180 and/or 190. In addition, plurality of light emitting diode devices780 may include instances of light emitting diode device 300. Further,plurality of light emitting diode devices 780 may include instances oflight emitting diode devices as described in FIGS. 5A-5F. It isappreciated that not all instances of plurality of light emitting diodedevices 780 need be identical.

Light 780 may illuminate display 770 from the front and/or the backand/or the sides of display 770, and may be referred to as a frontlight, back light and/or side light. Light from light 780 may be coupledto the display by a diffuser in front of or behind display 770.

Embodiments in accordance with the present invention provide systems andmethods for inverted optical devices. In addition, embodiments inaccordance with the present invention provide systems and methods forinverted optical devices that enable dissimilar substrates to benefitfrom process machinery optimized for large substrates. Further,embodiments in accordance with the present invention provide systems andmethods for inverted optical devices that are compatible andcomplementary with existing systems and methods of integrated circuitdesign, manufacturing and test.

Various embodiments of the invention are thus described. While thepresent invention has been described in particular embodiments, itshould be appreciated that the invention should not be construed aslimited by such embodiments, but rather construed according to the belowclaims.

What is claimed is:
 1. An apparatus comprising: a non-conductingsubstrate structure; a light emitting diode semiconductor structurehaving a pair of contact surfaces, wherein said pair of contact surfacesface said substrate structure; an insulating material coupling saidlight emitting diode semiconductor structure to said substratestructure.
 2. The apparatus of claim 1, wherein the substrate structurecomprises a reflective surface on a non-light transmissive side ofsubstrate structure.
 3. The apparatus of claim 1, wherein the contactsurfaces comprise roughened surfaces through which light is emitted. 4.The apparatus of claim 1, wherein a roughened surface is adjacent to anoptical layer.
 5. The apparatus of claim 1, wherein a roughened surfaceis not adjacent to an optical layer.
 6. The apparatus of claim 1 whereinsaid substrate structure comprises a non-crystalline interface with saidlight emitting diode semiconductor structure.
 7. The apparatus of claim1 wherein the light emitting diode semiconductor structure was notfabricated on said substrate structure.
 8. The apparatus of claim 1wherein a substrate upon which said light emitting diode semiconductorstructure was fabricated is absent.
 9. The apparatus of claim 1 whereina last sequentially fabricated layer of said light emitting diodesemiconductor structure is closest to said substrate structure.
 10. Theapparatus of claim 1 further comprising a plurality of optical layersadjacent to and coupled to said light emitting diode semiconductorstructure, opposite of said substrate structure.
 12. The apparatus ofclaim 10 wherein one of said plurality of optical layers having thehighest refractive index is placed closest to said light emitting diodesemiconductor structure.
 13. The apparatus of claim 1 further comprisingconductive structures electrically coupling said pair of contactsurfaces to package contacts on said substrate structure.
 14. Theapparatus of claim 13 wherein said package contacts are on a surface ofsaid substrate structure away from said light emitting diodesemiconductor structure.
 15. The apparatus of claim 1 wherein saidsubstrate structure comprises a conductive pathway for electricallycoupling at least one of said pair of contact surfaces to a packagecontact on said substrate structure.
 16. The apparatus of claim 1further comprising a fabrication substrate comprising a crystallineinterface to said light emitting diode semiconductor structure.
 17. Theapparatus of claim 34 wherein said insulating, inorganic material isdisposed between said substrate structure and said fabricationsubstrate.
 18. The apparatus of claim 1 wherein one of said plurality ofoptical layers having the highest refractive index is placed closest tosaid light emitting diode semiconductor structure.
 19. The apparatus ofclaim 10 wherein a doped conductive layer of said light emitting diodesemiconductor structure is in contact with one of said plurality ofoptical layers.
 20. The apparatus of claim 2 further comprising: a basefor coupling to an alternating current supply; and electronicsconfigured to convert said alternating current to electrical powersuitable for driving said light emitting diode.
 21. The apparatus ofclaim 2 further comprising: a processor for operating a graphical userinterface; a display for displaying said graphical user interface; andwherein said light emitting diode is configured to illuminate saiddisplay.